MB6S_datasheet

文章描述:-2022年2月18日发(作者:bingyu)ufeff----------------------- Page 1-----------------------MB2S, MB4S & MB6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier F

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MB6S_datasheet 2022年2月18日发(作者:bingyu)

ufeff----------------------- Page 1-----------------------



MB2S, MB4S & MB6S



Vishay General Semiconductor



Miniature Glass Passivated Single-Phase

Surface Mount Bridge Rectifier



FEATURES

~

• UL recognition, file number E54214



~ • Saves space on printed circuit boards



• Ideal for automated placement



• High surge current capability



~ • Meets MSL level 1, per J-STD-020, LF maximum

peak of 250 °C



• Solder dip 260 °C, 40 s

~

• Component in accordance to RoHS 2002/95/EC

TO-269AA (MBS) and WEEE 2002/96/EC



TYPICAL APPLICATIOS

General purpose use in ac-to-dc bridge full wave

PRIMARY CHARACTERISTICS rectification for power supply, lighting ballaster, Battery

charger, home appliances, office equipment, and

I 0.5 A

F(AV) telecommunication applicati.



VRRM 200 V, 400 V, 600 V



IFSM 35 A MECHAICAL DATA

IR 5 µA Case: TO-269AA (MBS)

VF 1.0 V Epoxy meets UL 94V-0 flammability rating

TJ max. 150 °C Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for cumer grade, meets JESD 201 class



1A whisker test

Polarity: As marked on body



MAXIMUM RATIGS (T = 25 °C unless otherwise noted)

A



PARAMETER SYMBOL MB2S MB4S MB6S UIT



Device marking code 2 4 6



Maximum repetitive peak reverse voltage VRRM 200 400 600 V



Maximum RMS voltage VRMS 140 280 420 V



Maximum DC blocking voltage VDC 200 400 600 V



Maximum average on glass-epoxy P.C.B. 0.5 (1)

forward output rectified on aluminum substrate IF(AV) 0.8 (2) A

current (Fig. 1)



Peak forward surge current 8.3 ms single half

IFSM 35 A

sine-wave superimposed on rated load

Rating for fusing (t < 8.3 ms) I2 2

t 5.0 A s



Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C



otes:



(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads



(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad



Document umber: 88661 For technical questi within your region, please contact one of the following:

Revision: 01-Feb-08 PDD-Americas@, PDD-Asia@, PDD-Europe@ 1



----------------------- Page 2-----------------------



MB2S, MB4S & MB6S



Vishay General Semiconductor



ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

A



PARAMETER TEST CODITIOS SYMBOL MB2S MB4S MB6S UIT



Maximum instantaneous

0.4 A VF 1.0 V

forward voltage drop per diode



Maximum DC reverse current at rated TA = 25 °C

5.0

IR µA

DC blocking voltage per diode TA = 125 °C 100



Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF



THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

A



PARAMETER SYMBOL MB2S MB4S MB6S UIT



RθJA 85 (1)

Typical thermal resistance RθJA 70 (2) °C/W

RθJL 20 (1)



otes:



(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads



(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad



ORDERIG IFORMATIO (Example)



PREFERRED P/ UIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUATITY DELIVERY MODE



MB2S-E3/45 0.22 45 100 Tube



MB2S-E3/80 0.22 80 3000 13" diameter paper tape and reel



RATIGS AD CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)



0.8 35

) T = 40 °C

A Aluminum Substrate A

( ) Single Half Sine-Wave

t 0.7

n A 30

(

e

r t

r n

u 0.6 e

C r 25



r

d u

e 0.5 C

i

f

i e

t g 20 f = 50 Hz f = 60 Hz

c

e Glass r

R 0.4 u

S

d Epoxy d 15

r P.C.B. r

a 0.3 a

w w

r r

o o 10

F 0.2 F

e k

g a

a e 5

r 0.1 Resistive or Inductive Load P 1.0 Cycle

e

v

A

0 0

0 20 40 60 80 100 120 140 160 1 10 100



Ambient Temperature (°C) umber of Cycles



Figure 1. Derating Curve for Output Rectified Current Figure 2. Maximum on-Repetitive Peak Forward Surge

Current Per Diode



For technical questi within your region, please contact one of the following: Document umber: 88661

2 PDD-Americas@, PDD-Asia@, PDD-Europe@ Revision: 01-Feb-08



----------------------- Page 3-----------------------



MB2S, MB4S & MB6S





Vishay General Semiconductor



10 30



) T = 25 °C

A J

(

t 25 f = 1.0 MHz

n )

e T = 150 °C F Vsig = 50 mVp-p

r J p

r (

u

e

C 1 T = 25 °C c 20

J

d n

r a

t

a i

w c

r a 15

o p

F a

s C

u n

o 0.1 o 10

e i

n t

c

a

n

t Pulse Width = 300 µs u

n

a J 5

t 1 % Duty Cycle

s

n

I



0.01 0

0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.1 1 10 100 1000



Instantaneous Forward Voltage (V) Reverse Voltage (V)



Figure 3. Typical Forward Voltage Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode



100



e

g

a

k T = 125 °C

a 10 J

e

L



e )

s A

r

e µ

v (

e t

R n 1

e

s r

r

u u

o C

e

n

a

t 0.1

n

a

t

s

n T = 25 °C

I J



0.01

0 20 40 60 80 100



Percent of Rated Peak Reverse Voltage (%)



Figure 4. Typical Reverse Leakage Characteristics Per Diode



PACKAGE OUTLIE DIMESIOS in inches (millimeters)



TO-269AA (MBS)

0.029 (0.74) Mounting Pad Layout

0.017 (0.43)



0.023 MI.

(0.58 MI.)



0.161 (4.10) 0.272 (6.90)

0.144 (3.65) 0.252 (6.40)



0.272 MAX.

(6.91 MAX.)

0.030 MI.

(0.76 MI.)



0.105 (2.67)

0.095 (2.41)

0.195 (4.95)



0.179 (4.55) 0 to 8° 0.205 (5.21)

0.195 (4.95) 0.105 (2.67)

0.095 (2.41)

0.049 (1.24)

0.106 (2.70) 0.039 (0.99)

0.090 (2.30) 0.062 (1.57)

0.058 (1.47)



0.0075 (0.19) 0.008 (0.20) 0.016 (0.41)

0.114 (2.90) 0.0065 (0.16) 0.004 (0.10) 0.006 (0.15)

0.094 (2.40) 0.114 (2.90) 0.018 (0.46)

0.038 (0.96) 0.110 (2.80) 0.014 (0.36)

0.019 (0.48) 0.058 (1.47)

0.054 (1.37)



Document umber: 88661 For technical questi within your region, please contact one of the following:

Revision: 01-Feb-08 PDD-Americas@, PDD-Asia@, PDD-Europe@ 3



----------------------- Page 4-----------------------



Legal Disclaimer otice



Vishay



Disclaimer



All product specificati and data are subject to change without notice.



Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all pers acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.



Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specificati do not expand or

otherwise modify Vishay’s terms and conditi of purchase, including but not limited to the warranty expressed

therein, which apply to these products.



o license, express or implied, by estoppel

or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.



The products shown herein are not designed for use in medical, life-saving, or life-sustaining applicati unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applicati do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditi regarding

products designed for such applicati.



Product names and markings noted herein may be trademarks of their respective owners.



Document umber: 91000

Revision: 18-Jul-08 1



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MB6S_datasheet

发布时间:2022-02-18 21:31:23
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